First-Principle Theoretical Study on Epitaxial Crystal Growth of GaN

2001 ◽  
Vol 188 (2) ◽  
pp. 579-582 ◽  
Author(s):  
S. Murata ◽  
M. Ikenaga ◽  
K. Nakamura ◽  
A. Tachibana ◽  
K. Matsumoto
Keyword(s):  
Crystal Growth ◽  
Theoretical Study ◽  
First Principle ◽  
Epitaxial Crystal Growth

Computer simulation of epitaxial crystal growth on (001) of silicon

1994 ◽  
pp. 317-320
Author(s):  
O. Kouchi ◽  
Y. Abe ◽  
Y. Kogure ◽  
Masao Doyama ◽  
M. Matsui
Keyword(s):  
Computer Simulation ◽  
Crystal Growth ◽  
Epitaxial Crystal Growth

scholarly journals Epitaxial Crystal Growth of Charged Colloids

2002 ◽  
Vol 89 (25) ◽  
Author(s):  
J. P. Hoogenboom ◽  
A. Yethiraj ◽  
A. K. van Langen-Suurling ◽  
J. Romijn ◽  
A. van Blaaderen
Keyword(s):  
Crystal Growth ◽  
Charged Colloids ◽  
Epitaxial Crystal Growth

scholarly journals Equilibria Configurations for Epitaxial Crystal Growth with Adatoms

2018 ◽  
Vol 230 (3) ◽  
pp. 785-838 ◽  
Author(s):  
Marco Caroccia ◽  
Riccardo Cristoferi ◽  
Laurent Dietrich
Keyword(s):  
Crystal Growth ◽  
Epitaxial Crystal Growth

Theoretical Study on Cation Vacancy Induced Magnetism in Bulk ZnO

2011 ◽  
Vol 110-116 ◽  
pp. 1397-1400 ◽  
Author(s):  
Pei Liang ◽  
Le Wang
Keyword(s):  
Magnetic Properties ◽  
Magnetic Moment ◽  
Theoretical Study ◽  
Cation Vacancy ◽  
Vacancy Defect ◽  
High Curie Temperature ◽  
First Principle ◽  
Half Metallic ◽  
Ferro Magnetic ◽  
Zn Vacancy

Based on first principle FP-LAPW calculations, the electronic structure and magnetic properties of ZnO with Zn cation vacancy has been investigated. We find that the cation vacancy defect can induce a magnetic moment of about 2μB/supercell. The magnetic moment mainly comes from 2p-orbitals of O atoms which surround the Zn vacancy. We also find that the two Zn vacancies in ZnO always coupled Ferro-magnetically. Furthermore, the system shows half metallic Ferro-magnetic properties with high Curie temperature.

Theoretical Study of Gallium Nitride Crystal Growth Reaction Mechanism

2011 ◽  
Vol 50 (12R) ◽  
pp. 125601 ◽  
Author(s):  
Yuji Ikeda ◽  
Norifumi Ohmori ◽  
Noriaki Maida ◽  
Masato Senami ◽  
Akitomo Tachibana
Keyword(s):  
Gallium Nitride ◽  
Crystal Growth ◽  
Reaction Mechanism ◽  
Theoretical Study ◽  
Growth Reaction
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